Hang zhou

TFTs for Display

 

Peking University Shenzhen Graduate School

 

 

Email: zhouh81@pkusz.edu.cn

 

 

Biography

Dr. Hang Zhou is currently an associate professor at Peking University Shenzhen Graduate School. He received his PhD degree from University of Cambridge in 2011, where he studied carbon nanotube based electronic devices. After one-year postdoctoral work at the London Center for Nanotechnology，he joined Peking University Shenzhen Graduate School, and was promoted to associate professor in 2014. His research focuses on oxide TFT based photosensors, organic and perovskite photodetectors, and flexible batteries. His lab is known for developing high sensitivity phototransistors based on perovskite materials, and high energy density zinc ion batteries based on biopolymer electrolytes. He has published more than 50 journal articles and 60 international conferences, including npj Flexible Electronics, Advanced Materials, IEEE International Electron Devices Meeting. He is currently serving as vice director of Shenzhen Thin Film Transistor and Advanced Display Key Lab, and as technical consultant of TCL group.

Abstract for Presentation

 Elimination of Persistent Photoconduction in Amorphous InZnO Thin-Film Transistor via Dual-Gate Pulses

Amorphous InZnO (a-IZO) thin film transistors (TFT) are highly sensitive to green or shorter wavelength light, and can be applied as photosensors. Nonetheless, the application of a-IZO TFT as photosensor is hindered by its persistent photoconduction (PPC), which leads to severe threshold voltage shift and low response speed. Here, we show that the PPC in the a-IZO TFT cannot be thoroughly eliminated by single-gate positive pulses. The residual ionized oxygen vacancy (Vo2+) per gate pulse would gradually accumulate over time, giving rise to an increment of PPC under long-term illumination. To tackle this issue, a dual-gate transistor architecture together with dual-gate pulses configuration is proposed. Due to a stronger gate controllability, the residual Vo2+ that lie in the middle of the IZO channel is reduced, and the PPC of a-IZO TFT is thoroughly eliminated.

 

 

 

References

[1] H. Liu, X.L. Zhou, C.H Fan, `J.Chen,L.Lu, S.D. Zhang, H.Zhou, IEEE Elec. Dev. Lett., 2022, doi: 10.1109/LED.2022.3183840