Haomin Wang

2D Materials

 

Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai, China

 

Email: hmwang@mail.sim.ac.cn

 

Biography

   Dr. Wang received his B.E. and M.E. degree from the Department of Solid State Electronics in Huazhong University of Science and Technology in 1999 and 2002, respectively. He earned his Ph.D degree in the department of electrical and computer engineering of National University of Singapore in 2008.8. At the end of 2011, Dr. Wang was appointed as a research professor at State Key Laboratory of Functional Materials for Informatics of SIMIT. Dr. Wang’s current research interest focuses on fabrication of novel low dimensional materials and exploration of their transport properties. The recent availability of novel nanoscale materials, such as atomically thin 2-dimensional crystals is enabling the assembly and study of ‘2D’ electronics and mechanical devices. Recently, Dr. Wang made great progresses in direct growth of graphene and its nanostructures on hexagonal boron nitride, including alignment determination, gaseous catalyst assisted growth, edge control of graphene domains and fabrication of oriented graphene nanoribbons. The progresses are recognized in research community of 2D materials, and shine a light on further application of 2D materials in nano-electronics and superconducting electronics. Dr. Wang published 65 peer-reviewed papers in SCI Journals, including Nature Materials, Nature Reviews Physics, Science Advances, Nature Communications et al., and all these papers have been cited more than 5600 times. He also holds 29 invention patents, including 6 international patents. He was awarded the First Prize of Natural Science in Shanghai (2/5) in 2020.

Abstract for Presentation

Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact

 

 

   Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge-contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low-power operation. Here, we demonstrate that a power consumption can be reduced to ~53.7 fJ in a cell with ~3 nm-wide graphene nanoribbon (GNR) as edge-contact, whose cross-sectional area is only ~1 nm2. It is found that the polarity of bias pulse determines its cycle endurance in the asymmetric structure. If a positive bias was applied to graphene electrode, the endurance could be extended at least one order longer than the case with a reversal of polarity. In addition, the introduction of h-BN multilayer leads to a low resistance drift and a high programming speed in a memory cell. The work represents a great technological advance for the low power PCRAM and could benefit for in-memory computing in future. 

 

 

References

 

[1] W. Zhang, R. Mazzarello, M. Wuttig, E. Ma, Nat. Rev. Mater. 2019, 4, 150.
[2] F. Rao, K. Ding, Y. Zhou, Y. Zheng, M. Xia, S. Lv, Z. Song, S. Feng, I. Ronneberger, R. Mazzarello, W. Zhang, E. Ma, Science 2017, 358, 1423.
[3] D. Loke, T. H. Lee, W. J. Wang, L. P. Shi, R. Zhao, Y. C. Yeo, T. C. Chong, S. R. Elliott, Science 2012, 336, 1566.
[4] K. Ding, J. Wang, Y. Zhou, H. Tian, L. Lu, R. Mazzarello, C. Jia, W. Zhang, F. Rao, E. Ma, Science 2019, 366, 210.
[5] F. Xiong, A. D. Liao, D. Estrada, E. Pop, Science 2011, 332, 568. 
[6] L. Chen, L. He, H. S. Wang, H. Wang, S. Tang, C. Cong, H. Xie, L. Li, H. Xia, T. Li, T. Wu, D. Zhang, L. Deng, T. Yu, X. Xie, M. Jiang, Nat. Commun. 2017, 8, 14703.