Emerging thin film technology
School of Materials Science and Engineering，Nankai University, Tianjin, China
He graduated from Jilin University with a bachelor's degree in solid state physics in July 1991. He graduated from Chunguang Institute of mechanics and physics, Chinese Academy of Sciences, majoring in condensed matter physics in July 1998 and received a doctoral degree. From September 1998 to September 2000, he worked as a postdoctoral in the Institute of physics, Chinese Academy of Sciences. From October 2000 to September 2001. He worked as a postdoctoral in the Department of Electronic Science, Department of engineering, University of Tokyo, Japan. From October 2001 to September 2006. He worked as a postdoctoral in the Research Center Rossendorf, Dresden, Germany. From October 2006 to June 2015, He has been a professor in the School of Physics Sciences and School of Material Science and Engineering of Nankai University since July 2015. He has been engaged in the research of silicon-based electroluminescence devices for near 20 years, and has made great progress in the research of ion implanted silicon pn junction, nanocrystalline silicon and rare earth ion doped silicon-based oxide MOS devices. He founded the silicon photonics and energy storage device Laboratory of Nankai University. At present, he is mainly engaged in the research of amorphous and polycrystalline nanocomposite optoelectronic film materials and devices with atomic layer deposition technology. He has published more than 100 publications in peer-reviewed journals, undertaken a number of scientific research projects such as national "973" projects and National Natural Science Foundations of China.
Abstract for Presentation
Efficient electroluminescence from rare earth doped amorphous Al2O3-Ga2O3 nanolaminates prepared by atomic layer deposition
Rare earth doped luminescent materials are of crucial important on optical communications and optoelectronics. However, the present rare earth doped optical waveguide amplifier and laser can only work under the optical pump by external lasers, electric pump has not yet been realized, this makes them unsuitable for compact large-scale integration. In this report, rare earth doped silicon-based amorphous Al2O3 optical gain materials are combined with Ga2O3 power semiconductor materials, and rare earth doped nanolaminate electroluminescence material and devices are developed by atomic layer deposition technology. The influences of the distributed doping of single rare earth atomic layers on the luminescence properties, such as luminescent intensity, excitation cross section, energy transfer and concentration quenching are studied, Separate control of the hot electron transportation and luminescent properties is adopted by controlling the distance of the doping rare earth atomic layers as well as co-doping of atomic layer of sensitizers around the rare earth layers to overcome the problem of restriction due to the spatial overlapping in traditional uniformly doped materials. By jointly improving the average energy of hot electrons and the effective doping concentration and excitation cross section of rare earth ions. The electron transport, dielectric relaxation and breakdown properties of the nanolaminate composite dielectric materials are studied. By using composite oxide gate MOS structure with negative feedback stabilized electrical transportation, local avalanche breakdown can be suppressed automatically, silicon-based electroluminescent devices with high efficiency and high stability will be developed, which form a foundation for application in integrated electrically pumped rare earth doped silicon-based optical waveguide amplifiers and lasers.
 Li Yang, Jing Xu, Kang Yuan, Yang Yang and Jiaming Sun, Appl. Phys. Lett. 118, (2021) 141104.
 Kang Yuan, Li Yang, Yang Yang, and Jiaming Sun, Appl. Phys. Lett. 119, 201105 (2021).
 Yao Liu, Zhongtao Ouyang, Jianzhao Liu, Li Yang, Yang Yangand Jiaming Sun, J. Phys. D: Appl. Phys. 53, (2020) 215104.
 Yuanyuan Wang, ZhiminYu, YangYang*, Jiaming Sun, Scripta Materialia, 196, (2021) 113750.
 Yang Yang, Zhongtao Ouyang, Jianzhao Liu, and Jiaming Sun, Phys. Status Solidi RRL 13, (2019) 0-1900137.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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