Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Dr. Kai Zhang received his Ph. D. degree in applied physics from The Hong Kong Polytechnic University in 2011. Prior to joining Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science (CAS) as a research professor in 2015, he experienced postdoc research in Massachusetts Institute of Technology and National University of Singapore, respectively. He was the recipient of the honor and awards of the CAS Pioneer Talent Programme in 2015, Suzhou High-quality Professionals in 2016, Jiangsu 333 Programme Talent in 2018, Excellent Scientists and Technologists Award by The Chinese Institute of Electronics (CIE) in 2018, Excellent Young Scholars by National Natural Science Foundation of China (NSFC) in 2019, Yong Rising Star in Semiconductor Research by Journal of Semiconductors (JOS) in 2020 and Nano Research Young Innovators (NR45) Award in 2021. His research interests are in the areas of narrow-gap two-dimensional (2D) materials and devices, with research activities ranging from the exploration and controllable growth of narrow-gap 2D semiconductors (as black phosphorus) and topological materials, as well as the development of infrared & terahertz lasers and photodetectors. He has published over 100 peer-reviewed papers and holds 10 patents. He has given many Invited Talks in international conferences. He has been serving as a member of the China Editorial Advisory Board of IOP Publishing, Young Advisory Board of InfoMat, Editorial Board of JPhys Materials, Editorial Board of Advanced Materials and Devices (Spring Nature) and TPC Chairs and Session Chairs in various conferences.
Abstract for Presentation
Narrow-gap 2D Semiconductors for Infrared and Terahertz Optoelectronics
Narrow-gap semiconductors like Ⅲ-Ⅴ/Ⅱ-Ⅵ materials and their superlattices boost the infrared (IR) and terahertz (THz) technologies and play a critical role in the fields of security inspection, bio-medical imaging, free-space communication, gas detection, and so on. Nowadays, conventional IR and THz devices encounter great challenges referring to the complex structures and expensive epitaxy growth, incompatible with silicon chips, etc. The rising of two-dimensional (2D) materials, with the advantages of atomic thickness, van der Waals integration and fantastic physical characteristics, paves the way for the evolution of advanced optoelectronics. For this end, we have paid our continuous effort on the growth and band engineering of novel narrow-gap 2D semiconductors [1-5] and their applications in IR & THz devices, especially for lasers and photodetectors [6-10].
 Y. Xu, J. Yuan, K. Zhang*, Y. Hou, Q. Sun, Y. Yao, S. Li, Q. Bao, H. Zhang*, Y. Zhang, Adv. Funct. Mater., 27 (2017) 1702211.
 Z. Cheng, A. Tofik, F. Wang, Y. Gao, P. He, K. Zhang*, C. Jiang, Q. Liu, J. He*, Adv. Mater., 30 (2018) 1707433.
 X. Wu, G. Wu, Y. Xu, H. Cheng, Q. Yu, K. Zhang*, W. Chen, S. Chen, Nat. Commun., 9 (2018) 4573.
 Y. Xu, X. Shi, Y. Zhang, H. Zhang, Q. Zhang, Z. Huang, X. Xu, J. Guo, H. Zhang, L. Sun, Z. Zeng, A. Pan, K. Zhang*, Nat. Commun., 11 (2020) 1330.
 J. Yang, Z. Song, L. Guo, H. Gao, Z. Dong, Q. Yu, R. Zheng, T. Kang*, K. Zhang*, Nano Letter, 21 (2021), 10139-10145.
 W. Guo, Z. Dong, Y. Xu, C. Liu, D. Wei, L. Zhang, X. Shi, C. Guo, H. Xu, G. Chen, L. Wang, K. Zhang*, Adv. Sci., 7 (2020) 2070029.
 Z. Dong, W. Yu, L. Zhang, H. Mu, L. Xie, J. Li, Y. Zhang, L. Huang, X. He, L. Wang*, S. Lin*, K. Zhang*, ACS Nano, 15 (2021) 20403-20413.
 L. Zhang, Z. Dong, L. Wang*, Y. Hu, C. Guo, L. Guo, Y. Chen, L. Han, K. Zhang, S. Tian, C. Yao, Z. Chen, M. Cai, M. Jiang, H. Xing*, X. Yu, X. Chen, K. Zhang*, W. Lu, Adv. Sci., 8 (2021) 2102088.
 H. Li, M. Yan, W. Wan, T. Zhou, K. Zhou, Z. Li, J. Cao, Q. Yu, K. Zhang*, M. Li, J. Nan, B. He, H. Zeng, Adv. Sci., 6 (2019) 1900460.
 Y. Dai, Q. Yu, X. Yang, K. Guo, Y. Zhang, Y. Zhang, J. Zhang, J. Li, J Chen, H. Deng, T. Xian, X. Wang*, J. Wu*, K. Zhang*, ACS Nano, 16 (2022) 4239–4250.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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