Beijing Normal University,No.19, Xinjiekouwai St, Haidian District, Beijing, 100875, P.R.China
Dr. Peng received his Ph.D in Materials Science in 2004 from Tsinghua University, Beijing. He was a senior research staff member from 2004 to 2006 at City University of Hong Kong. He is now full Professor of Materials Physics and Chemistry at Beijing Normal University, Beijing, China. The development and application of wet etching concepts constitute his major research interests. He is attributed to having first adopted the metal-catalyzed etching of silicon for the fabrication of silicon nanowires and black silicon, and made significant contributions to silicon etching and the emerging applications of silicon nanostructures such as nanowires.
Abstract for Presentation
Mechanism and Rapid Formation of Uniform Cracks in Metal-Assisted Etched Silicon Nanowire Arrays Membranes
Horizontal cracks in silicon nanowire (SiNW) array membrane significantly facilitates the uniform transfer of SiNW array onto foreign substrates. Herein, for the first time, we elucidate that the oxidative dissolution of silver by dissolved oxygen in hot water is essential to trigger horizontal crack formation in silver-assisted etched SiNW array membrane, and devise a general strategy for rapidly generating horizontal cracks in metal-assisted etched silicon nanowire array membrane by metal etchant enabled rapid metal dissolution and metal-assisted silicon etching . The rapid metal dissolution by strong wet metal etchants at room temperature enables the soaking process to be reduced to one minute or less. We anticipate that the present work provides a scientific guidance to prepare cracked SiNW array membrane in terms of simplicity and scalability, and paves the way for mass production of high performance SiNWs-based flexible devices such as solar cells, sensors and battery .
 G. Farid, Y. Yang, A. Mateen, C. Huo, H. Wang, K. Q. Peng*, ACS Appl. Nano Mater. 5 (2022)
 C. Huo, J. Wang, H. Fu, X. Li, Y. Yang, H. Wang, A. Mateen, G. Farid, K. Q. Peng*, Adv. Funct. Mater. 30 (2020) 2005744. Adv. Mater., 32 (2019) 1903945
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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