No. 1500 Shunhua Road, Jinan, China
Qinglei Guo received his Ph.D. in microelectronics and solid-state electronics from Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. After that, he worked as a post-doctoral researcher successively in Fudan University (China) and University of Illinois at Urbana-Champaign (USA). Since Nov. 2018, He is the full professor in the School of Microelectronics at Shandong University (China). His research focuses on inorganic semiconductors and devices for applications in flexible/transient electronics. He has published more than 80 peer-reviewed journal papers, which have been published in Materials Science & Engineering R-Reports, Advanced Functional Materials, Small, Applied Physics Letters, IEEE Transactions on Electron Devices, ACS Applied Materials & Interfaces, and many others.
Abstract for Presentation
Transferable inorganic semiconductor nanomembranes and their applications for flexible/transient sensors
The rapid development of material science and semiconductor technology are promoting integrated circuits (ICs) into the post-Moore era, and a universal perspective holds that silicon is no longer suitable for extending the Moore’s law. One of the most compelling opportunities for future directions of silicon involves the use of silicon, in an ultra-thin format, i.e., silicon nanomembranes, for constructing unusual devices or systems with features of large-area coverage, mechanically flexible, and/or physically transient. In this work, we will present our efforts on the developing advanced materials and assembly strategies for the construction of inorganic semiconductor-based flexible electronics, with emphases on the transfer of ultra-thin silicon/germanium nanomembranes and their applications in flexible/transient sensors, as shown in Fig. 1. We proposed a notch-assisted transfer technique to address the large-area assembly and controllable cracking of ultra-thin silicon nanomembranes. Then, flexible or stretchable electronic devices, including biosensors, photodetectors, dual-parameter sensors, and transient power supply devices will be fabricated and exhibited. These results will pave the way for the development of inorganic semiconductor-based flexible electronics, which strongly supports the developing route of “More-than-Moore” in the already arrived post-Moore era.
Figure 1. Main features of single-crystalline silicon/germanium nanomembranes.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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