Emerging thin film technology
Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing, China
Shaoyun Huang is an associate professor of School of Electronics, Peking University. He is also a key member of the Beijing key laboratory of quantum devices and the Key Laboratory for the Physics and Chemistry of Nanodevices. His research interests include semiconductor quantum dot spin qubits, solid-state quantum computations, semiconductor low dimensional nanostructure based quantum devices, low-temperature transport.
Prof. Huang is involved in more than 7 research projects including NSFC, 973 programs etc. He obtained one Chinese patent and has authorized more than 50 research papers on Science, Nature Nanotechnology, Nano Letter, Applied Physics Letters etc. He was invited to write two review articles on handbooks of ASP and Willey. He served as an Editorial Board Member of IOP Journal of Semiconductors and as a visiting researcher of Riken, Japan. He served as the vice secretary in general to help organizing the 33rd International Conference on the Physics of Semiconductors (ICPS2016).
Prof. Huang has achieved (1) Highly tunable single quantum dot (QD) as well as linear double and triple QD devices realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. (2) Successful realization of singleelectron Coulomb blockaded devices in Bi2Te3 nanoplates to address electron transport properties of quantum confined topological insulator. (3) Gate-all-around field-effect transistors realized with thin, single-crystalline, pure-phase InAs nanowires with high on-state current Ion of ~10 μA and an on-off current ratio of as high as 10 6 at source-drain bias voltage of 50 mV. (4) A fully reversible two-mode single-molecule electrical switch with unprecedented levels of accuracy (on/off ratio of ~100), stability (over a year) and reproducibility (46 devices with over 100 cycles for photoswitching and ~10 5 to 10 6 cycles for stochastic switching).
Ph.D. in Physical Electronics, Tokyo Institute of Technology, 2003
M.S. in Physics, Nanjing University, 2000
B.S. in Physics, Nanjing University, 1997
Abstract for Presentation
Multiple Coupled Quantum Dots of one Single InAs Nanowire for Spin Qubits
Confined electron spin-degree of freedom in semiconducting quantum dots is considered as one of promising solid-state approaches to realize quantum computation implementations . Electrostatically gated Ⅲ-Ⅴ semiconductor nanowires have attracted increasing attention in fully electrical manipulation of electron spin, because the nanowires possess strong radial confinements, small effective mass, large Landé gfactors and strong spin-orbit interaction of electrons. [2, 3]
In this talk, we show a highly tunable multiple quantum dot device based on a locally gated single-crystal pure-phase InAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE) methods and manifest great performance in field-effect transistor applications. [4-6] The high tunability of the quantum dots on tunneling barriers, electron filling, and coupling strength with other dots and source/drain reservoirs is demonstrated to allow reliable initialization of specific electron-spin configuration and applicable manipulation of electron-spin states. By detuning the energy level of each dot and applying an external magnetic field, we systematically study spin-mixing mechanisms and identify each mechanism in different magnetic field regions at a few-electron spin-blockade condition.  A single quantum dot serving as a charge sensor is integrated to the scalable quantum dots using local top finger-gate techniques on two neighboring pure-phase InAs nanowires. The charge occupation states of quantum dots can be monitored accurately by the sensor even in few-electron regime where transport tunneling current through dots vanishes. The highly tunable multiple quantum dots with the integrated charge sensor on InAs nanowires could be an essential building block for quantum information processing technology.
 D. Loss, D. P. DiVincenzo, Phys. Rev. A 57 (1998) 120.
 J. Y. Wang, S. Y. Huang, Z. Lei, D. Pan, J. Zhao, H. Q. Xu, Appl. Phys. Lett. 109 (2016) 053106.
 X. Wang, S. Huang, J-Y Wang, D. Pan, J. Zhao, HQ Xu, Nanoscale 13 (2021) 1048.
 D. Pan, M.-Q. Fu, X.-Z Yu, X.-L. Wang, L.-J. Zhu, S.-H. Nie, S.-L Wang, Q. Chen, P. Xiong, S. von Molnar, and J.-H. Zhao, Nano Lett. 14 (2014) 1214.
 Q. Li, S.-Y. Huang, D. Pan, J. Wang, J. Zhao, and H. Q. Xu, Appl. Phys. Lett. 105 (2014) 113106.
 B. Feng, S.-Y. Huang, J. Wang, D. Pan, J. Zhao, and H. Q. Xu, J. Appl. Phys. 119 (2016) 054304.
 J. Y. Wang, S. Y. Huang, G.Y. Huang, D. Pan, J. H. Zhao, and HQ Xu, Nano Lett. 17 (2017) 4158.
 J-Y Wang, G-Y Huang, S. Huang, J. Xue, D. Pan, J. Zhao, HQ Xu, Nano Lett. 18 (2018) 4741.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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