Shaoyun Huang

Emerging thin film technology



Beijing  Key  Laboratory  of  Quantum  Devices,  Key  Laboratory  for  the  Physics  and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing, China






Shaoyun  Huang  is  an  associate  professor  of  School  of  Electronics,  Peking University.  He  is also a key member  of  the Beijing key laboratory of quantum devices and the Key Laboratory for the Physics and Chemistry of Nanodevices. His research interests  include  semiconductor  quantum  dot  spin  qubits,  solid-state  quantum computations, semiconductor low dimensional  nanostructure  based quantum devices, low-temperature transport.

Prof. Huang is involved in  more than 7  research projects including NSFC, 973 programs  etc.  He  obtained  one  Chinese  patent  and  has  authorized  more  than  50 research papers on Science, Nature  Nanotechnology, Nano Letter, Applied Physics Letters etc. He was invited to write two review articles on handbooks of ASP and Willey. He served as an Editorial Board Member of IOP Journal of Semiconductors and as a visiting researcher of Riken, Japan. He  served as the vice secretary in general to  help  organizing  the  33rd  International  Conference  on  the  Physics  of Semiconductors (ICPS2016).

Prof.  Huang  has achieved  (1) Highly tunable single quantum dot (QD) as well as linear double and triple QD devices realized in a single-crystalline pure-phase InAs nanowire using a local finger  gate technique. (2) Successful realization of singleelectron  Coulomb  blockaded  devices  in  Bi2Te3  nanoplates  to  address  electron transport properties  of  quantum  confined  topological  insulator. (3) Gate-all-around field-effect  transistors  realized  with  thin,  single-crystalline,  pure-phase  InAs nanowires with high on-state current Ion of ~10 μA and an on-off current ratio of as high as 10 6 at source-drain bias voltage of 50 mV.  (4) A  fully reversible two-mode single-molecule electrical switch with unprecedented levels of accuracy (on/off ratio of ~100), stability (over a year) and reproducibility (46 devices with over 100 cycles for photoswitching and ~10 5 to 10 6 cycles for stochastic switching).


Ph.D. in Physical Electronics, Tokyo Institute of Technology, 2003

M.S. in Physics, Nanjing University, 2000

B.S. in Physics, Nanjing University, 1997 

Abstract for Presentation

Multiple Coupled Quantum Dots of one Single InAs Nanowire for Spin Qubits


Confined  electron  spin-degree  of  freedom  in  semiconducting  quantum  dots  is considered as one of promising solid-state approaches to realize quantum computation implementations  [1].  Electrostatically  gated  Ⅲ-Ⅴ  semiconductor  nanowires  have attracted increasing attention in fully electrical manipulation of electron spin, because the nanowires possess strong radial confinements, small effective mass, large Landé gfactors and strong spin-orbit interaction of electrons. [2, 3]

In this talk, we show  a  highly tunable  multiple  quantum dot device based on a locally gated single-crystal pure-phase InAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE) methods and manifest great performance in field-effect transistor  applications.  [4-6]  The  high  tunability  of  the  quantum  dots  on  tunneling barriers,  electron  filling,  and  coupling  strength  with  other  dots  and  source/drain reservoirs  is  demonstrated  to  allow  reliable  initialization  of  specific  electron-spin configuration  and  applicable  manipulation  of  electron-spin  states.  By  detuning  the energy level of each dot and applying an external magnetic field, we systematically study spin-mixing mechanisms and identify each mechanism in different magnetic field regions at a few-electron spin-blockade condition. [7]  A single quantum dot serving as a charge sensor is integrated to  the  scalable quantum dots using local  top finger-gate techniques  on  two  neighboring  pure-phase  InAs  nanowires.  The  charge  occupation states of quantum dots can be monitored accurately by the sensor even in few-electron regime where transport tunneling  current through dots  vanishes.  The highly tunable multiple quantum dots with the  integrated charge sensor on InAs nanowires could be an essential building block for quantum information processing technology.


[1] D. Loss, D. P. DiVincenzo, Phys. Rev. A 57 (1998) 120.

[2] J. Y. Wang, S. Y. Huang, Z. Lei, D. Pan, J. Zhao, H. Q. Xu, Appl. Phys. Lett. 109 (2016) 053106.

[3] X. Wang, S. Huang, J-Y Wang, D. Pan, J. Zhao, HQ Xu, Nanoscale 13 (2021) 1048.

[4] D. Pan, M.-Q. Fu, X.-Z Yu, X.-L. Wang, L.-J. Zhu, S.-H. Nie, S.-L Wang, Q. Chen, P. Xiong, S. von Molnar, and J.-H. Zhao, Nano Lett. 14 (2014) 1214.

[5] Q. Li, S.-Y. Huang, D. Pan, J. Wang, J. Zhao, and H. Q. Xu, Appl. Phys. Lett. 105 (2014) 113106.

[6] B. Feng, S.-Y. Huang, J. Wang, D. Pan, J. Zhao, and H. Q. Xu, J. Appl. Phys. 119 (2016) 054304.

[7] J. Y. Wang, S. Y. Huang, G.Y. Huang, D. Pan, J. H. Zhao, and HQ Xu, Nano Lett. 17 (2017) 4158.

[8] J-Y Wang, G-Y Huang, S. Huang, J. Xue, D. Pan, J. Zhao, HQ Xu, Nano Lett. 18 (2018) 4741.