Emerging thin film technology
School of Microelectronics, Fudan University, Shanghai, China
Dr. Shi-Jin Ding is a professor of the school of microelectronics, Fudan University, and vice director of Jiashan Fudan Institute. He received the Ph.D. degree from Fudan University in 2001. After that, he worked as research fellow of the Alexander von Humboldt Foundation in Kiel University of Germany, and then as research fellow in National University of Singapore. He joined Fudan University in 2005, and became Full Professor in 2008. His current research interests include metal-oxide semiconductor-based field-effect transistors and memories, atomic layer deposition/molecular layer deposition of nanofilms and nanodots for integrated circuits and other electronic devices.
Abstract for Presentation
Semiconductor Nanofilms/nanodots for Electronic Devices
In this talk, some emerging fabrication methods will be introduced for semiconductor nanofilms and nanodots which can be used for switching devices, memory devices and chemical sensors. Firstly, I will introduce the growth of InOx nanofilms by thermal atomic layer deposition (TALD) and plasma-enhanced atomic layer deposition (PEALD) using different precursors, which are used as the channel layers of thin-film transistors (TFTs). In particular, the effect of the channel thickness on the TFT performance will be discussed in detail. Meanwhile, to improve the device performance, various post-treatment techniques are explored. Therefore, high performance TFTs have been achieved, including near-zero-threshold-voltage, a very small subthreshold slope of 69 mV/dec, a very high ON/OFF current ratio of ~10 10 , and relatively high field effect mobility of 17 cm 2 /Vs. Secondly, molecular layer deposition will be introduced to prepare ultrathin organic semiconductor films of polythiophene under precise control. The resulting nanoscale ultrathin films presented a good thickness uniformity and smooth surface, in contrast to the uneven porous structure of spin-coated films. Further, the fabricated gas sensor using the above polythiophene film as an active layer exhibited a 17%/ppm sensitivity to ammonia and a response time of less than 2 s, which is much superior to its counterpart with the spin-coated polythiophene film and is the best performance compared to previous reports. Lastly, different compositional halide perovskite (CsPbX3) quantum dots (PQDs) were obtained by thermal evaporation deposition under precious control. By using different bandgaps PQDs as stepped floating gates, the fabricated transistors exhibit nonvolatile multilevel memory states written/erased by electrical and high-bandwidth optical signals. Meanwhile, the device can also realize logic functions such as an optoelectronic AND gate by separably programming the states of the stepped floating gates with bias and optical wavelength. A convergence of multilevel logic computing and storage is further achieved on the transistor.
 Q. Ma, H.-M. Zheng, Y . Shao, B. Zhu, W.-J. Liu*, S.-J. Ding* and D. W. Zhang, Nanoscale Res. Lett. (2018) 13:4
 Q. Ma, Y . Shao, Y.-P. Wang, H.-M. Zheng, B. Zhu, W.-J. Liu , S.-J. Ding*, and D. W. Zhang, IEEE Electron Device Lett., 39 (2018) 1672
 D.-Q. Xiao, B.-B. Luo, C.-M. Huang, W. Xiong, X. Wu*, S.-J. Ding*, IEEE Trans. Electron Devices, DOI: 10.1109/TED.2022.3173249
 H. Tan, Y . Chu, X. Wu*, W .-J. Liu, D. W. Zhang, and S.-J. Ding*, Chem. Mater., 2021, 33 (2021) 7785
 J. Pei, X. Wu*, W.-J. Liu, D. W. Zhang, and S.-J. Ding*, ACS Nano 16 (2022) 2442
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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