Tianxiao Nie

2D Materials

 

Beihang University, Beijing, China

 

Email: nietianxiao@buaa.edu.cn

 

Biography

      Dr. Tianxiao Nie currently is a full professor in Beihang University. Since 2020, he serves as the vice dean of School of Integrated Circuit Science and Engineering. His research activities include ferromagnetic semiconductor, 2D ferromagnet, and spintronic terahertz. So far, he has published more than 70 SCI journal papers in related directions, such as Nature Communications, Advanced Materials, ACS Nano, etc. He has also contributed to several book chapters, as well as more than 20 national invention patents, participated in the compilation of textbooks for the 14th Five-Year Plan of the National Publishing Industry. He served as IOP China editorial advisory board member, local chair of the IEEE/ACM NANOARCH conference, guest editor of Acta Physica Sinica, etc. 

Abstract for Presentation

Room-temperature and wafer-scale 2D Magnets towards 2D spintronics application

 

 

  To date, despite the continuous improvement of integrated circuit manufacturing technology, the scaling of device has encountered the bottlenecks of low reliability and high-power consumption, due to the quantum effect limitation. The “Moore’s Law” that has lasted for nearly 50 years in the microelectronics industry will not be sustainable. The advent of two-dimensional (2D) materials may bring new opportunities to be out of current dilemmas. Among them, 2D magnets exhibit a variety of fascinating electrical, optical and ferromagnetic properties in the atomic level, which may initiate new application in information processing, magnetic memory and other technologies. However, only a few 2D ferromagnetic materials have been synthesized, and long-range ferromagnetic order was usually suppressed within a limited temperature range. The large-scale production and control of room-temperature ferromagnetism in 2D magnetic materials are the focus at current stage. Herein, wafer-scale 2D magnet of Fe3+xGeTe2 (FGT) was successfully achieved by MBE. Combined with topological insulator of Bi2Te3, room-temperature ferromagnetism was demonstrated through the interface engineering effect [1]. Based on this, SOT switching of ferromagnetism in an all-vdW heterojunction was achieved at room temperature, and the critical switching current was almost one order of magnitude lower than previous studies. Furthermore, ultrafast terahertz spin current pumped by femtosecond laser was probed by terahertz time-domain spectroscopy in such all-vdW heterostructure, which provides a potential way for ultrafast magnetization control [2]. The exploration of 2D magnet with high Curie temperature and the further fabrication of novel 2D spintronic devices operating at room temperature will be an important step towards the practical application of 2D magnet for 2D spintronic devices, thus promoting the development of integrated circuit industry.

 

 

References
[1] Wang, H.;  Liu, Y.;  Wu, P.;  Hou, W.;  Jiang, Y.;  Li, X.;  Pandey, C.;  Chen, D.;  Yang, Q.;  Wang, H.;  Wei, D.;  Lei, N.;  Kang, W.;  Wen, L.;  Nie, T.*;  Zhao, W.*; Wang, K. L., ACS Nano (2020) 14 10045−10053.
[2] Chen, X.;  Wang, H.;  Liu, H.;  Wang, C.;  Wei, G.;  Fang, C.;  Wang, H.;  Geng, C.;  Liu, S.;  Li, P.;  Yu, H.;  Zhao, W.;  Miao, J.;  Li, Y.;  Wang, L.;  Nie, T.*;  Zhao, J.*; Wu, X.*, Adv. Mater., 2022, 2106172