Silicon Thin Film
Globle Institute of Future Technology (University of Michigan - Shanghai Jiao Tong University Joint Institute), Shanghai Jiao Tong University 200240, Shanghai, China
Abstract for Presentation
Atomically thin delta-doping of self-assembled molecular monolayers by flash lamp annealing
for Si-based solar blind deep UV photodiodes
Delta doping can find a wide range of applications in advanced metal-oxide field
effect transistors, deep UV photodetectors, quantum devices and others. In this work, we formed a delta-doping layer in silicon by employing the flash lamp annealing to treat the PCl3 monolayers grafted on silicon surfaces. The delta-doping layer is atomically thin (<1nm). Low temperature Hall measurements show that the deltadoping layer is in metallic state and exhibits a weak localization phenomenon, implying that a two-dimensional electron gas is formed. When we form such an n-type deltadoping layer on a highly doped p-type Si substrate, a highly sensitive solar-blind UV photodetector is created, which traditionally was only possibly by using wide bandgap semiconductors such as gallium nitride (GaN) or silicon carbide (SiC).
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