Silicon Thin Film
Handan Raod 220, 200433 Shanghai, China
Yongfeng Mei received his BS and MS in physics from Nanjing University and PhD in materials physics from City University of Hong Kong. He is a professor in materials physics and chemistry and associated department head in the Department of Materials Science at Fudan University (China). Before that, he worked as a post-doctoral researcher in the Max Planck Institute for Solid State Research (Germany) and then led a research group in the Leibniz Institute for Solid State and Materials Research Dresden (Germany) as a staff scientist. His research interest focuses on the nanomembrane materials development in micro/nanorobotics, flexible electronics/optoelectronics and nanophotonics. (Website: http://nanomem.fudan.edu.cn)
Abstract for Presentation
Silicon Nanomembranes for Transient and Smart Sensors
Nanomembranes, as a new type of nanomaterials with a thickness below hundreds of nanometers, offer great opportunities for practical applications in the Internet of Things era. The reduction of material thickness creates possibilities for brittle inorganic semiconductors to become flexible, which is essential for the realization of bendable and stretchable electronics. Such flexible character exhibits great potential from portable electronics to implantable or wearable healthcare devices in the improvement of daily life. As one of the important application forms of flexible electronics, the bendable photodetector is an essential part as the sensing component for a most integrated system as shown in Figure 1. Flexible photodetectors based on single-crystalline silicon nanomembranes (Si-NMs) have attracted great attention due to their excellent mechanical bendability, transient performance, optoelectronic sensitivity, and response seed and integrability to conventional CMOS chips.
Figure 1. A flexible smart system with functional modules based on silicon nanomembranes is composed of the phototransistor array,
amplifier, power supply, and logic units/memory for the humidity test in real time.
 G. S. Huang, Y. F. Mei, Small 2018, 14, 1703665.
 Q. L. Guo, Y. F. Fang, M. Zhang, G. S. Huang, K. Paul, K. Chu, Y. F. Mei, Z. F. Di, X. Wang, IEEE Trans. Electron Devices 2017, 64, 1985; Q. L. Guo, Z. F. Di, M. G. Lagally, Y. F. Mei, Mater. Sci. & Eng. R: Report 2018, 128,1; E. M. Song, Y. K. Lee, R. Li, J. H. Li, X. Jin, K. J. Yu, Z. Q. Xie, H. Fang, Y. D. Zhong, H. N. Du, J. Z. Zhang, G. H. Fang, Y. Kim, Y. Yoon, M. A. Alam, Y. F. Mei, Y. G. Huang, J. A. Rogers, Adv. Funct. Mater. 2018, 28, 1702284.
 E. M. Song, Q. L. Guo, G. S. Huang, B. Jia, Y. F. Mei, ACS Appl. Mater. Interfaces 2017, 9, 12171; H. Wang, H. L. Zhen, S. L. Li, Y. L. Jing, G. S. Huang, Y. F. Mei, W. Lu, Sci. Adv. 2016, 2, e1600027.
 Q. L. Guo, M. Zhang, Z. Y. Xue, G. Wang, D. Chen, R. G. Cao, G. S. Huang, Y. F. Mei, Z. F. Di, X. Wang, Small 2015, 11, 4140; G. J. Li, Q. L. Guo, Y. F. Fang, S. W. Tang, M. J. Liu, G. S. Huang, Y. F. Mei, Phys. Status Solidi A 2017, 214, 1700295; G. J. Li, E. M. Song, G. S. Huang, Q. L. Guo, F. Ma, B. Zhou, Y. F. Mei, Adv. Funct. Mater. 2018, 28, 1801448.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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