Hideo Hosono

Tutorials: Hideo Hosono

Amorphous Oxide Semiconductors

Hideo Hosono

While amorphous hydrogenated Si (a-Si:H) had been exclusively used as the backplane TFTs to drive flat panel displays, amorphous oxide semiconductor (AOS)-TFTs is becoming a major alternative due to their high mobility, low off-current, high transparency, and easy fabrication. In particular, AOSs with In-Ga-Zn-O compositions (IGZO) are practically applied as the backplane for high resolution and energy-saving LCDs and large-sized OLED TVs. Oxide semiconductors have rather different characteristics from the traditional semiconductors. In this talk I introduce the research history, the general feature of carrier transport properties, electronic structure of AOS materials and TFT application covering t display backplane and capacitance-free memory.

Reference:

Hosono, H., & Kumomi, H. (Eds.). (2022). Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory. John Wiley & Sons. Kuo, Y., Hosono, H., Shur, M. S., & Jang, J. (2024). Oxide Thin Film Transistors. John Wiley & Sons.

Tutorial Speaker

Hideo Hosono

Institute of Science Tokyo & National Institute for Materials Research, JAPAN

Tutorial (14:00-15:00, 18th Aug, Wuhan Lecture Hall (武汉报告厅))

Institute of Science Tokyo &

National Institute for Materials Research, JAPAN

Yokohama, Japan

Email: hosono.h.aa@m.titech.ac.jp

Hideo Hosono received a Ph.D. in Applied Chemistry from Tokyo Metropolitan University in 1982, and became a professor of Tokyo Institute of Technology in 1999 via associate prof. of Nagoya Institute of Technology and Institute for Molecular Science. He is now an honorary and institute professor (the funding director of materials research center for element strategy, MCES) of Tokyo Tech and a group leader (a distinguished fellow) at The International Center for Materials Nanoarchitectonics (MANA) of National Institute for Materials Science (NIMS).

His research focus is creation of novel electronic materials. The representative achievements are material designing of transparent amorphous oxide semiconductors such as IGZO and their TFT applications for flat panel displays, creation of stable electrides and their application to catalysts for ammonia synthesis, and discovery of high-Tc iron-based superconductors.

He is a recipient of various honors including the Japan Prize, von Hippel Prize (MRS) and J.McGroddy Prize (APS), Jan Raychman Prize (SID), Imperial Prize, Japan Academy Prize, Thomson Reuter Citation Laureate, and a foreign fellow of the Royal Society.

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