Oxide Materials and Devices
Hanyang University,222 Wansimni-ro, Seongdong-gu, Seoul,Korea
1993-2002. B.S. (1997)/M.S. (1999)/Ph. D. (2002), Department of MSE, KAIST
2003~2005. Post-Doctor, Chemistry and Chemical Biology, Harvard University
2005~2008. Senior Researcher, Center of R & D, Samsung SDI
2008~2009. Senior Researcher, Research Center, Samsung Mobile Display
2009~2013. Assistant Professor, MSE, Dankook University,
2013~Present Professor, Materials Science and Engineering, Hanyang University
2021.11. ‘Merck Special Award’ for ALD material and Process: Contribute for oxide semiconductor as channel material for memory & display application.
2018, General Chair,18th International Atomic Layer Deposition 2018 (ALD 2018)
2017 KEIT (Korea Evaluation Institute of Technology) President Award’
‘Functional Thin Film Application for Flexible Display’
2014 ‘Merck Young Scientist Award’ (2014.8) in IMID 2014
‘Successful Industry contribution with oxide semiconductor thin film transistor’
Atomic Layer Deposition for Semiconductor & Display Applications
- Oxide Semiconductor Material, Process, and the associated devices
- Flexible/Stretchable/wearable electronics: Active matrix devices
- Functional thin films: Organic-inorganic hybrids, Gas diffusion barrier, Passivation.
Abstract for Presentation
Recent Progresses on Oxide Semiconductor Materials and Devices using Atomic Layer Deposition
Atomic Layer Deposition (ALD) has remarkably developed in semiconductor and nano-structure applications since early 1990. The unique properties, including controlling atomic-level-thickness, manipulating atomic-level-composition control, and depositing impurity-free films uniformly, may accelerate ALD related industries and applications in functional thin film markets. One of big and challenging markets, display industry, has been just started to look at the potential to adopt ALD based films in emerging semiconductor & display applications, such as oxide semiconductors.
In this talk, I will present the recent progress of Oxide Semiconductor materials and the associated device application. Unlike commercial sputtering method, ALD can make an opportunity to enhance not only device performances but also flexible properties. Firstly, I will show various oxide semiconductors deposited by ALD and compare with their semiconductor properties and device performances. Also, several multicomponent oxide semiconductors (In, Ga, Zn, and Sn elements), deposited by super cycle ALD methods, will be discussed regarding process issues vs. material properties. the V-IGZO (Vertical-InGaZnO, Figure1) will be discussed as one of strategies, to manipulate oxide semiconductor properties. In conclusion, it will discuss a few issues of ALD oxide semiconductor process if considering high resolution display and 3D memory application.
 Y-S. Kim, et al., Adv. Mater. Inter. (2022), https://doi.org/10.1002/admi.202200501
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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