Professor John Robertson is an Emeritus Professor of Electronic Engineering at Cambridge University, UK, and former head of Electrical Engineering. He is a Fellow of Royal Society (FRS), Fellow of the Royal Academy of Engineering (FREng), Fellow of the IEEE, APS, MRS, and the Japanese Applied Physics Society. He was cited for his work on high K oxides, and general contributions to electronic materials. He has published about 750 journal papers, with an H index of 122 (Web of Science) or 139 (Google Scholar). He was recently awarded the IEEE Cledo Brunetti prize (2023) for high K materials.

InGaZn Oxide (IGZO), and back-end-of-line (BEOL) v= semiconducting oxides

John Robertson

Amorphous InGaZn oxide was discovered by the Hosono group in 2004 at the Tokyo Institute of Technology. This oxide possess an s-like conduction band minimum (CBM) of high mobility for an amorphous material, because of the isotropic nature of s states. It was excellent for manufacturing flat panel displays. It could be deposited at reasonably low temperatures. IGZO can now be synthesised by atomic layer deposition (ALD) and thus by deposited into three-dimensional structures. Meanwhile the scaling of FETs into planar structures according to Moore’s law has reached its limit. The reliability of IGZO has been optimised. This has led to the use of ALD IGZO by the main-stream FET industry as 3D monolithic integration (M3D) to continue Moore’s law into complex structures combining logic and memory as required. The only thing missing is a suitable complementary p-type oxide.

Tutorial (11:30-12:00, 19th Aug, Grand Ballroom, 3F)

Email: jr214@cam.ac.uk

Abstract