TFTs for Display
Institute of State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, 510640, Guangzhou, China
Honglong Ning is a professor of China South University of Technology. He received BS in metal materials and fabrication in 1993, MS in powder metallurgy in 1999, and PhD in electronic material & packaging in 2004. He worked in Korean Samsung from 2004 to 2013 as a principle researcher, he had published more than 200 research papers and applied more than 200 patents, and his current research interests concern LCD, OLED and E-Paper including flexible, print display materials and devices.
Abstract for Presentation
Eco-friendly flexible silicon doped amorphous SnO2 thin-film transistor
With the rapid development of display technology in large size, ultra-high resolution and flexible wearable application, it is critical to develop low-cost and high-performance thin-film transistor (TFT) driving backplane technology. Metal oxide semiconductors are considered to a new generation of display backplane driving technology due to their advantages such as high mobility, high transparency, good uniformity, and low-temperature manufacturing process and so on. Electronic products are closely related to our lives with the development of science and technology. At the same time, a large amount of e-waste is also produced, which causes a huge threat to our health and living environment. The intrinsic nature of AOSs enables to achieve high-performance thin-film transistors (TFTs) using low temperature process, which would be a strong point for next-generation flexible electronics. However, most AOS TFTs still require post-annealing treatments (>350 °C) for structural relaxation to suppress defects, which lead to the issue of thermal resistance of plastic substrates. Therefore, a strategy for obtaining both low-temperature process and defect suppression is highly demanded for flexible electronics. Therefore, it is great significant to develop low cost and eco-friendly oxide TFTs for display technology. Tin oxide (SnO2) is a low-cost, eco-friendly semiconductor material due to its non-toxic, cheap, and high chemical stability. However, it is difficult to achieve good performance of SnO2 TFT because it contains high carrier concentration. [1-4]. To solve the former issue, a Sn–Si–O system is proposed in this paper. It is clarified that Si cations play the roles of amorphousizing SnO2 and suppressing carrier concentration. As a result, room-temperature fabricable flexible Sn–Si–O TFTs with high mobility and high reliability are demonstrated. It is also suggested that obtaining a rigid film structure is quite important to fabricate high performance TFTs without any further post-annealing treatment. The obtained saturation mobility (μsat) and on/off ratio are 7.59 cm2V−1s−1and 1.59 × 107, respectively. The flexible TFTs also exhibited a good flexibility and reliability after continuing 3500 bending cycles. These results suggest that SiSnO TFTs has a great potential for the application to future flexible electronic device. This work suggests that amorphous Si doped SnO2 has the potential for the application to the flexible driving backplane in display industry [5-6].
 H. Yoo, I. S. Lee, S. Jung, S. M. Rho, B. Kang, and H. Kim*, Adv. Mater., 33 (2021) 2006091-n/a.
 J. Shi, J. Zhang, L. Yang, M. Qu, D. Qi, and K. H. L. Zhang*, Adv. Mater., 33 (2021) e2006230-n/a.
 X. Yu, T. J. Marks and A. Facchetti*, Nature Mater., 15 (2016) 383-396.
 J. A. Spencer *, A. L. Mock, A. G. Jacobs, M. Schubert, Y. Zhang, and M. J. Tadjer, Appl. Phys. Rev., 9 (2022) 126.
 X. Liu, J. Zhang, Y. Shiah, J. Kim*, H. Ning*, K. Lu, X. Cao, W. Xu, R. Yao*, and J. Peng, Adv. Mater. Interfaces, 8 (2021) 2002193.
 X. Liu, H. Ning, W. Chen, Z. Fang, R. Yao*, X. Wang, Y. Deng, W. Yuan, W. Wu*, and J. Peng, Nanomaterials, 8 (2018) 293.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
Connect with us: