Phase Change and Memory
University of Pennsylvania, Philadelphia, USA
Deep Jariwala is an Assistant Professor in Department of Electrical and Systems Engineering at the University of Pennsylvania (Penn). His research interests broadly lie at the intersection of new materials, surface science and solid-state devices for computing, sensing, opto-electronics and energy harvesting applications. Deep completed his undergraduate degree in Metallurgical Engineering from the Indian Institute of Technology, Banaras Hindu University in 2010. Deep went on to pursue his Ph.D. in Materials Science and Engineering at Northwestern University graduating in 2015. At Northwestern, Deep made contributions to the study of charge transport and electronic applications of two-dimensional (2D) semiconductors and pioneering the study of gate-tunable, mixed-dimensional, van der Waals heterostructures. Deep then moved to Caltech as a Resnick Prize Postdoctoral Fellow from 2015-2017 working on nanophotonic devices and ultrathin solar cells before joining Penn in 2018 and starting his own group. Deep’s research has earned him awards of multiple professional societies including the Russell and Sigurd Varian Award and Paul H. Holloway Award of the American Vacuum Society, The Richard L. Greene Dissertation Award of the American Physical Society, Johannes and Julia Weertman Doctoral Fellowship, the Hilliard Award, the Army Research Office Young Investigator Award, Nanomaterials Young Investigator Award, TMS Frontiers in Materials Award, Intel Rising Star Award, IEEE Young Electrical Engineer of the Year Award, IEEE Photonics Society Young Investigator Award, IUPAP Early Career Scientist Prize in Semiconductors in addition to being named in Forbes Magazine list of 30 scientists under 30 and is an invitee to Frontiers of Engineering conference of the National Academy of Engineering as well as a recipient of the Sloan Fellowship. In addition, he has also received the S. Reid Warren Jr. award given to one faculty member every year at Penn Engineering for inspiring and motivating undergraduate students through teaching. He also serves on the Editorial board of the journals Electronics and Micromachines. He has published over 100 journal papers with more than 14000 citations and 7 patents. At Penn he leads a research group comprising more than ten graduate and postdoctoral researchers supported by a variety of government agencies (NSF, DARPA, ARO, AFOSR), industries and private foundations.
Abstract for Presentation
Ferroelectric Memories from III-Nitrides and 2D Chalcogenides
In this talk I will present our ongoing and recent work on integration of 2D materials with 3D ferroelectrics to realize memory devices. First, I will present our recent work on non-volatile memories based on Ferroelectric Field Effect Transistors (FE-FETs) made using a heterostructure of MoS2/AlScN1, 2. We have demonstrated scalable and record performing FE-FETs using AlScN as the FE dielectric and MoS2 as the semiconducting channel. We have scaled up these devices to large areas and small channel lengths with no degradation in performance. All of our devices are made in a Si CMOS BEOL compatible process. Finally, I will also present our work on Ferroelectric Diode devices also based on thin AlScN3 and in-memory computing4 device using them.
1. Liu, X.; Wang, D.; Kim, K.-H.; Katti, K.; Zheng, J.; Musavigharavi, P.; Miao, J.; Stach, E. A.; Olsson, R. H.; Jariwala, D. Nano Letters 2021, 21, (9), 3753-3761.
2. Kim, K.-H.; Oh, S.; Fiagbenu, M. M. A.; Zheng, J.; Musavigharavi, P.; Kumar, P.; Trainor, N.; Aljarb, A.; Wan, Y.; Kim, H. M. arXiv preprint arXiv:2201.02153 2022.
3. Liu, X.; Zheng, J.; Wang, D.; Musavigharavi, P.; Stach, E. A.; Olsson III, R.; Jariwala, D. Applied Physics Letters 2021, 118, (20), 202901.
4. Liu, X.; Ting, J.; He, Y.; Fiagbenu, M. M. A.; Zheng, J.; Wang, D.; Frost, J.; Musavigharavi, P.; Esteves, G.; Kisslinger, K.; Anantharaman, S. B.; Stach, E. A.; Olsson III, R.; Jariwala, D. arXiv preprint arXiv:2202.05259 2022.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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