Plenary (21:20-22:00, 23rd Aug, Sanjiang Lecture Hall (三江报告厅))

Email: mseyang@zju.edu.cn

Research home page: https://person.zju.edu.cn/en/0092004

He is an academician of Chinese Academy of Science, is the president of NingboTech University. He is also a professor and the director of Academic Committee of State Key Lab of Silicon Materials at Zhejiang University in China. 
He has engaged in the research of silicon materials used for microelectronic devices, solar cells and nano-devices. He has authored 17 books as an author or co-authors including 6 in English, and edited 6 proceedings of international conferences. He has published over 930 research papers in international peer reviewed journals, such as Natural Comm. PRL, AM, Nano Lett., JACS, APL, PRB and et al, which have been cited more than 20090 times. His h index is 71. He also holds 178 patents.

Silicon Nanocrystals
Deren Yang

Given the abundance, non-toxicity, good biocompatibility and stability, silicon (Si) nanocrystals (NCs) and Si NCs-based composites have attracted extensive attention in biological applications, lithium ion batteries, memory devices and optoelectronic devices. Si NCs can be feasibly prepared via various synthesis methods, including top-down and bottom-up methods. Among those methods, non-thermal plasma synthesis is an effective pathway for preparing intrinsic or doped Si NCs with high purity. 
In this presentation, the progress in Si NCs related to size, surface, doping, and devices is reported. With the manipulation of the size, surface and doping, the electronic structure and optical properties of Si NCs can be widely modulated. Using size-induced quantum confinement and ligand-passivated surface, photoluminescence has been achieved over the entire visible spectral region with a quantum yield of more than 60%. Precisely controlled doping for Si NCs can be realized by extrinsically incorporating impurities, among which boron (B) and phosphorous (P) are the most extensive dopants. The concentrations of B and P in Si NCs can greatly exceed their solubility limits in Si via kinetics in the non-thermal plasma system. For heavily B-doped Si NCs, strong near-infrared absorption has been observed due to the existence of the band-tails and in-gap states.