The Mott Lecture is a traditional plenary speech at the ICANS, in the honor of Sir Nevill Mott, winner of the Nobel Physics prize in 1977. Sir Nevil Mott was one of the pioneers of the ICANS. 

This year's Mott Lecture will be given to Prof. Arokia Nathan. The title of his lecture will be "Oxide Electronics: From Disordered Materials to Ubiquitous Systems".

Prof. Arokia Nathan

    Arokia Nathan is a leading pioneer in the development and application of thin film transistor technologies to flexible electronics, display and sensor systems, and mm-Wave radios on glass. Following his PhD in Electrical Engineering, University of Alberta, Canada in 1988, he joined LSI Logic USA and subsequently the Institute of Quantum Electronics, ETH Zürich, Switzerland, before joining the Electrical and Computer Engineering Department, University of Waterloo, Canada. In 2006, he joined the London Centre for Nanotechnology, University College London as the Sumitomo Chair of Nanotechnology. He moved to Cambridge University in 2011 as the Chair of Photonic Systems and Displays, and he is currently a Bye-Fellow and Tutor at Darwin College. He has over 600 publications including 6 books, and more than 150 patents and four spin-off companies. He is a Fellow of the IEEE, Institution of Engineering and Technology (UK), Royal Academy of Engineering, Canadian Academy of Engineering, Society for Information Displays, Chinese Academy of Sciences, and National Academy of Inventors. He is a Distinguished Lecturer of the IEEE Electron Devices Society and Sensor Council, a Chartered Engineer (UK), and winner of the 2020 IEEE EDS JJ Ebers Award. He is currently the President of the IEEE Electron Devices Society.

Oxide Electronics: From Disordered Materials to Ubiquitous Systems

      The 2026 Mott Lecture will explore the evolution of thin film semiconductor oxide electronics as a transformative platform for next-generation semiconductor technologies, rooted in the principles of disorder and electronic transport pioneered by Nevill Mott. It will highlight recent advances in oxide thin-film transistors, focusing on their unique combination of high carrier mobility, optical transparency, and low-temperature processability. Bridging materials physics with device engineering, the lecture will illustrate how amorphous and nanocrystalline oxides enable scalable, large-area, and mechanically flexible electronic systems. Key application domains include high-resolution display backplanes, wearable sensing technologies, and transparent integrated electronics. The lecture will conclude by positioning oxide electronics as a cornerstone for energy-efficient, adaptive, and ubiquitous electronic systems of the future.

History of Mott Lecture

Mott Lecture (17th Aug，Wuhan Lecture Hall (武汉报告厅))

Research Home Page: https://xplorestaging.ieee.org/author/37275134700

Abstract for Presentation

Biography